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Mixer

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Published in: Networking
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Down Conversion Mixer 1.5754GHz to 577MHz

Najeemullah B / Hyderabad

8 years of teaching experience

Qualification: M.Tech (Moguls Institute of learning - 2007)

Teaches: Algebra, Computer Science, Mathematics, Physics, B.Tech Tuition, Electronics, M.Tech Tuition, Railways Exams, RRB, Sub-Inspector Exam, UGC Exams, Chemical, Electrical, Embedded Systems, Hardware Training, Informatica, MCA Subjects

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  1. DESIGN OF CMOS MIXER By NAJEEMULLA BAIG
  2. MIXERI Design Optimizedfor NF Here schematic of mixer 1 is shown which is used to down-convert the actual Ll band carrier signal coming from LNA output after amplification to an intermediate frequency of 577MHz which is further down converted by mixer2 to further low value of 20MHz.This mixer is a double balanced Gilbert mixer, here transistor Ml width 798.269um(calculated) which is optimized to around 836um to get better NF, and this width is divided into 9 fingers. This modification improved the NF to value 8.84dB from 8.94dB.further I have did the simulation by taking the width twice calculated and this resulted in further improvement in NF to value of 7.66dB.But I have drawn the layout for the schematic with W=836um. Here inductors L L are used at gate of Ml and source of Ml,which 6' 11 improved the NF. 2
  3. For tuning 577MHz signal a RLC tuned circuit is used. Let L=10.9021mH We have Solving for C, gives 1 211 LC 1 4112Lf 2 = 6.981397pF Reducing noise in the RF port can be done in the same manner as the LNA (optimum sizing for M3, and careful choice of biasing) (W) 3 -798.269um, LEO.18um. 3
  4. Schematic of mixerl with better NF Sel: O a Status: Ready Add Check Sheet m_wor mixer Options Migrate exper•men sc ema •c Hierarchy-Editor Mixed-Signa] nazeem_wor _m •xer exper•men con a -r=27 c Simulator: s Tools -ds=9øg.125e-27 abc cri=22a Design Vindow Edit vdd vdd! I ,øgøt24K- cap v.dd!. 1.ØC*Ø21e-ØB c Mdd! g94B2p net net 19 112 n Ids etø-112 wd — vd 226, and netw U112 gn 22a. 14 netØ112 n = 11.553m 40å— If etne vd at=22E. If nat5 gnd ms net etØ112 17rGt5 —4B-a 87m vddl sæ12.ö22S„ gs-77.1.7.1arn ds=2L7172 h=ö92edö2rn MN2 nets 1 vbins n •,-Js netlH d -t=22 =ti.etT9 MN147 •a.40å= end, 2B 221m netmga al-Il net.Ø etØl vbios vge=5 5m 3525 .BØ6rn vd.aat= grid vg =ä7äm wt =4183.B5rn wd El 1•3.32 4
  5. ? ? ? ? (? ? El ? ? -? (Q ? ? ? ? ?? ? ? ? ??? ? ?
  6. Mixer1Simu?ation Resu?ts Wilh respect to NF Port resistance (Rs) VDD*.3V vgs(V) LO DC S.N0 voltage(V) RF signal DC -1.1V -75, ? 2 3 4 1.9 2.0 2.2 I. 24435 1.16337 ? .08294 1.00216 1.34017 126037 1.18028 1.10001 1.01974 0.796111 0.811531 0.826452 0.840844 0.777486 0.793219 0.808470 0.823200 0.837543 8.850 8.838 8.834 14.30 8.966 8.946 8.920 8.904 11P3 (mdB) 11.545 8.8426 7.4680 1.8700 8.227 8.232 8.236 8.240 VDD:2.7V LO DC S.N0 voltage(V) 2 3 4 5 1.8 2.0 2.2 IIP3( mdB) 13.5246 11.9085 9.9257 7.363 3.730 6
  7. VDD:2.2V LO DC vgs (V) S.N0 voltage(V) 1.5 1.6 1.8 1.9 ? 2 3 4 5 6 7 8 9 2.0 2.15 2.2 ? 2 VDD:?.5 LO DC S.N voltage(V) 1.5 1.4 1.58847 1.51046 1.43199 1.35313 1.27396 1.19453 11493 1.07512 1.03535 I .6056 1.6821 0.724677 0.741940 0.758672 0.774876 0.790578 0.805795 0.820537 0.827731 0.834801 vt(V) 0.72078 .703355 9.120 9.082 9.050 9.021 8.990 8.974 8.954 9.221 9.261 llP3 (mdB) 17.24 16.23 15.083 13.76 12.22 10.3127 7.897 6.386 4.563 llP3( mdB) 17.457 18.33 7
  8. Observation made: as LO bias increases NF decreases, but beyond some voltage NF increases drastically, which is shown in above table with VDD=2.2V. When LO bias is increased slightly from 2. IV to 2.15V NF raised to 14.56mdB from 8.954mdB. llP3 also degrades when LO voltage increased.
  9. V TCI/ RPI) 2.28 2.25 2.23 2.15 2.13 soo -soo -750 3.34 3.32 3.24 65.46ns Input-Output Waveforms time Ins 1 First waveform shows the RF that is Ll carrier with frequency 1.5754GHz, second waveforms shows LO signal with 0.9984GHz and third one shows our IF signal with 577MHz frequency.
  10. ? ? ) T ( 7 ? ) ba ? a ? 0 ? ? ? ? ? ? ? 0 8 P E ? ? ? z ? ? 0 ? ? 9 EDT 0 01 0 ? 09 0 ? 09 0 ? 0 ? ( ? P)Æ P

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